SPP11N60C3XKSA1
- Mfr.Part #
- SPP11N60C3XKSA1
- Manufacturer
- Infineon Technologies
- Package/Case
- TO-220-3
- Datasheet
-
SPP11N60C3XKSA1
- Description
- MOSFET N-CH 650V 11A TO220-3
- Stock
- 35000
- Quality
-
- Social media
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 11A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 125W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 380mOhm @ 7A, 10V
- Supplier Device Package :
- PG-TO220-3-1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.9V @ 500µA
- Datasheets
- SPP11N60C3XKSA1
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| Global Express | |||
|---|---|---|---|
| Express Delivery | Global delivery 3-5 working days. |  |  |
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Our QC department staff would inspect and ensure all of the parts from YST ELECTRONIC are new & original in accordance with original manufacturer datasheet.
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